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IRFR320, IRFU320, SiHFR320, SiHFU320
www.vishay.com
PRODUCT SUMMARY
Power MOSFET
FEATURES
? Dynamic dV/dt Rating
Vishay Siliconix
V DS (V)
400
?
Repetitive Avalanche Rated
R DS(on) ( ? )
Q g (Max.) (nC)
Q gs (nC)
Q gd (nC)
Configuration
V GS = 10 V
20
3.3
11
Single
1.8
?
?
?
?
?
?
Surface Mount (IRFR320,SiHFR320)
Straight Lead (IRFU320,SiHFU320)
Available in Tape and Reel
Fast Switching
Ease of Paralleling
Material categorization: For definitions of compliance
D
please see www.vishay.com/doc?99912
DESCRIPTION
DPAK
(TO-252)
IPAK
(TO-251)
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
D
D
G
ruggedized device design, low on-resistance and
cost-effectiveness.
The DPAK is designed for surface mounting using vapor
G
S
G
D S
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU, SiHFU series) is for through-hole
ORDERING INFORMATION
S
N-Channel MOSFET
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
DPAK (TO-252)
SiHFR320-GE3
IRFR320PbF
SiHFR320-E3
DPAK (TO-252)
SiHFR320TRL-GE3 a
IRFR320TRLPbF a
SiHFR320TL-E3 a
DPAK (TO-252)
SiHFR320TR-GE3 a
IRFR320TRPbF a
SiHFR320T-E3 a
DPAK (TO-252)
-
IRFR320TRRPbF a
SiHFR320TR-E3 a
IPAK (TO-251)
SiHFU320-GE3
IRFU320PbF
SiHFU320-E3
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS (T C = 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
SYMBOL
V DS
V GS
LIMIT
400
± 20
UNIT
V
Continuous Drain Current
V GS at 10 V
T C = 25 °C
T C = 100 °C
I D
3.1
2.0
A
Pulsed Drain Current a
I DM
12
Linear Derating Factor
Linear Derating Factor (PCB Mount) e
0.33
0.020
W/°C
Single Pulse Avalanche Energy b
Repetitive Avalanche Current a
Repetitive Avalanche Energy a
Maximum Power Dissipation T C = 25 °C
Maximum Power Dissipation (PCB Mount) e T A = 25 °C
E AS
I AR
E AR
P D
160
3.1
4.2
42
2.5
mJ
A
mJ
W
Peak Diode Recovery dV/dt
c
dV/dt
4.0
V/ns
Operating Junction and Storage Temperature Range T J , T stg
Soldering Recommendations (Peak Temperature) d for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V DD = 50 V, starting T J = 25 °C, L = 29 mH, R g = 25 ? , I AS = 3.1 A (see fig. 12).
c. I SD ? 3.1 A, dI/dt ? 65 A/μs, V DD ? V DS , T J ? 150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
- 55 to + 150
260
°C
S13-0165-Rev. D, 04-Feb-13
1
Document Number: 91273
For technical questions, contact: hvmos.techsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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